Dielectric function parametric model, and method of use

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

G01N 2100

Patent

active

057969833

ABSTRACT:
Novel dielectric function parametric model oscillator structures comprised of finite order polynomials and/or essentially zero-width finite magnitude discontinuities in appropriate sequences, which novel oscillator structures are suitable for application in a Kronig-Kramer consistent dielectric function oscillator structure based mathematical model, are disclosed. The present invention method of application enables production of one-dimensional normalized dependent variable vs. independent variable evaluating look-up tables by application of convolution integration effected oscillator structure Gaussian broadening, as applied to finite order polynomials, without the requirement that numerical derivatives or integrations be performed. In use, addition of contributions from one or more said present invention oscillator structures allows determination of dependent variable values given independent variable values, without requiring subtraction of relatively large numbers. In addition only a relatively small set of essentially uncorrelated present invention oscillator structure finite order polynomial term coefficient and finite magnitude discontinuity magnitude defining mathematical model coefficients are required. The present invention dielectric function model oscillator structure mathematical model allows user determinable degrees of freedom which allow essentially any plot of dielectric function dependent vs. independent variable data to be modeled with a high degree of mathematical model coefficients.

REFERENCES:
patent: 4031370 (1977-06-01), Catherall
patent: 4905170 (1990-02-01), Forouhi et al.
Modeling The Optical Dielectric Function of The Alloy System Al.sub.x Ga.sub.(1-x) As Kim et al., Phys. Rev. vol. 47, No. 4, 15 Jan. 1993, p. 1876.
Temperature Dependence of Optical Properties of GaAs, J. Appl. Phys. 70(6), 15 Sep. 1991, Yao et al. p. 3261.
Saitoh, T. et al. "Evaluation of Microroughness at SiO /Si Interfaces for High Efficiency Crystalline Si Solar Structures," Photovoltaic Energy Conversion, 1994 IEEE World Conference, pp. 1648-1651, 1994.
A Modified Harmonic Oscillator Approximation Scheme for the Dielectric Constants of Al.sub.x Ga.sub.(1-x) As, Terry, Jr., J. Appl. Phys. 70(1), 1 Jul. 1991, p. 409.
A Parametric Dielectric Function Model For Semiconductor Suitable For Spectroscopic Ellipsometry Data Analysis, Herzinger & Johs, (Not Published).
Optical Properties of Crystalline Semiconductors & Dielectrics, Forouhi et al., Phys. Rev. vol. 38, No. 3, 15 Jul. 1988 p. 1865.
Modeling The Optical Dielectric Function of Semiconductors: "Extention of The Critical-Point Parabolic Band Approx", Kim et al., Phys. Rev., vol. 45, No. 20 15 May 1992.
Optical Properties & Damage Analysis of GaAs As Single Crystals Partly Amorphized by Ion Implantation, J. Appl. Phys. 56(10), Erman et al, 15 Nov. 1984, p. 2664.
Optical Dispersion Relation for GaP, GaAs, GaSb, InP, InAs, InSb, Al.sub.x Ga.sub.(1-x) As & In.sub.(1-x) As,P.sub.1-y), Adachi, J. Appl. Phys., 15 Dec. 1989 p. 6030.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Dielectric function parametric model, and method of use does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Dielectric function parametric model, and method of use, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dielectric function parametric model, and method of use will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1124763

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.