Dielectric films for use in magnetoresistive transducers

Details Dielectric films for use in magnetoresistive transducers Dielectric films for use in magnetoresistive transducers

1992-06-05

1994-04-12

Turner, A. A.

Stock material or miscellaneous articles

Composite

Of metal

360113, 360122, 428701, 428702, G11B 530

Patent

active

053024613

ABSTRACT:
A new class of materials for use as a dielectric to separate various metallic layers within a magnetoresistive transducer. The materials include oxides of Ta, Hf, Zr, Y, Ti, or Nb. Thin films of these materials, when fabricated in accordance with the teachings of the invention, constitute dielectric films which maintain their integrity as insulators at thicknesses down to 5 nm. Additionally, the adhesion of this class of dielectrics equals or exceeds that of commonly used dielectrics.

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N. Sangyo, "Thermo International Labratory", Nov. 11, 1991, Japanese Daily Report, p. 1.
K. Ramesh et al., "Process Dependence of Breakdown Filed in Thermally Nitrided Silicon Dioxide", Aug. 1991, Appl. Phys. 70(4), pp. 2299.gtoreq.2303.
J. Yamazaki, "Highly stable tantalum thin Film CR Circuit on a Single Substrate", Dec. 1970, Fujitsu Scientific & Tech. Journal, pp. 117-133.
Patent Abstracts of Japan, vol. 16, No. 80, Feb. 26, 1992 & JP-A-32,68,216 Hitachi Ltd., Nov. 28, 1991.

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