Incremental printing of symbolic information – Ink jet – Ejector mechanism
Reexamination Certificate
2006-06-13
2006-06-13
Hsieh, Shih-Wen (Department: 2861)
Incremental printing of symbolic information
Ink jet
Ejector mechanism
Reexamination Certificate
active
07059711
ABSTRACT:
The present invention provides a dielectric film structure having a substrate and a dielectric film provided on the substrate and in which the dielectric film has (001) face orientation with respect to the substrate, and in which a value u in the following equation (1) regarding the dielectric film is a real number greater than 2:in-line-formulae description="In-line Formulae" end="lead"?u=(Cc/Ca)×(Wa/Wc) (1)in-line-formulae description="In-line Formulae" end="tail"?where, Ccis a count number of a peak of a (00l′) face of the dielectric film in an Out-of-plane X ray diffraction measurement (here, l′ is a natural number selected so that Ccbecomes maximum); Cais a count number of a peak of a (h′00) face of the dielectric film in an In-plane X ray diffraction measurement (here, h′ is a natural number selected so that Ccbecomes maximum); Wcis a half-value width of a peak of the (00l′) face of the dielectric film in an Out-of-plane rocking curve X ray diffraction measurement; and Wais a half-value width of a peak of the (h′00) face of the dielectric film in an In-plane rocking curve X ray diffraction measurement.
REFERENCES:
patent: 3946398 (1976-03-01), Kyser et al.
patent: 4584590 (1986-04-01), Fischbeck et al.
patent: 4825227 (1989-04-01), Fischbeck et al.
patent: 5265315 (1993-11-01), Hoisington et al.
patent: 6555256 (2003-04-01), Christen et al.
patent: 6653211 (2003-11-01), Unno et al.
patent: 6783588 (2004-08-01), Aoto et al.
patent: 6927084 (2005-08-01), Fukui et al.
patent: 2002/0076875 (2002-06-01), Wasa et al.
patent: 2002/0140320 (2002-10-01), Unno et al.
patent: 0 656 429 (1995-06-01), None
patent: 53-12138 (1978-04-01), None
patent: 55-11811 (1980-01-01), None
patent: 62-22790 (1987-05-01), None
patent: 6-350154 (1994-12-01), None
patent: 7-33089 (1995-04-01), None
patent: 2002-86461 (2002-11-01), None
*See text of IDS for explanation.
Ogawa et al., “Controlling The Crystal Orientations of Lead Titanate Thin Films”, Japanese Journal of Applied Physics, Tokyo, Japan, vol. 30, No. 9B, Sep. 1, 1991, pp. 2145-2148.
Lin et al., “Epitaxial Growth ofPb(Zr0.2Ti0.8)O3On Si and its Nanoscale Piezoelectric Properties”, Applied Physics Letters, American Institute of Physics, New York, USA, vol. 78, No. 14, Apr. 2, 2001, pp. 2034-2036.
Lin et al., “Epitaxial growth of Pb (Zr0.2Ti0.8) O3on Si and its nanocale piezoelectric properties,”Applied Physics Letters, vol. 78, No. 14, Apr., 2001, pp. 2034-2036.
Okawa et al., “Controlling the Crystal Orientations of Lead Titanate Thin Films,”Japanese Journal ofApplied Physics, vol. 30, No. 9B, Sep. 1991, pp. 2145-2148.
Aoto Hiroshi
Fukui Tetsuro
Ifuku Toshihiro
Takeda Ken'ichi
Canon Kabushiki Kaisha
Fitzpatrick ,Cella, Harper & Scinto
Hsieh Shih-Wen
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