Dielectric film, method of manufacturing the same, and...

Semiconductor device manufacturing: process – Having magnetic or ferroelectric component

Reexamination Certificate

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C438S239000, C438S396000, C257S295000

Reexamination Certificate

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07575940

ABSTRACT:
Provided are a dielectric film, a method of manufacturing the same, and a semiconductor capacitor having the dielectric film. The semiconductor capacitor includes a lower electrode, a ferroelectric layer disposed on the lower electrode, a paraelectric layer disposed on the ferroelectric layer, and an upper electrode disposed on the paraelectric layer.

REFERENCES:
patent: 5986724 (1999-11-01), Akiyama et al.
patent: 7428162 (2008-09-01), Kijima et al.
patent: 2004/0266031 (2004-12-01), Inomata
patent: 2006/0125052 (2006-06-01), Moon et al.
patent: 1020050028748 (2005-03-01), None

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