Dielectric film and method for forming the same

Details Dielectric film and method for forming the same Dielectric film and method for forming the same

2005-05-31

2005-05-31

McNeil, Jennifer (Department: 1771)

Stock material or miscellaneous articles

Composite

Of inorganic material

C428S699000

Reexamination Certificate

active

06899965

ABSTRACT:
After an underlying layer, made of a single crystal metal material, has been formed on a semiconductor layer, part or all of the underlying layer is changed into a metal oxide layer by supplying oxygen thereto from above the underlying layer. Then, a ferroelectric or high-dielectric-constant film is further formed on the metal oxide layer. Since the film made of a metal material is formed on the semiconductor layer, a silicon dioxide film or the like is not formed easily. Thus, a dielectric film, which includes an underlying layer with a high dielectric constant and has a large capacitance per unit area, can be obtained. Various defects such as interface states in the semiconductor layer can also be reduced advantageously if these process steps are performed after a thermal oxide film has been formed on the semiconductor layer.

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