Dielectric element isolated semiconductor device and a method of

Details Dielectric element isolated semiconductor device and a method of Dielectric element isolated semiconductor device and a method of

1995-09-21

1996-10-01

Picardat, Kevin M.

Fishing, trapping, and vermin destroying

437 61, 437 67, 437 56, H01L 21302

Patent

active

055610773

ABSTRACT:
A high-breakdown voltage semiconductor device and a fabrication method are disclosed. A dielectric layer (3) dielectrically isolates a semiconductor substrate (1) from a n.sup.- type semiconductor layer (2). An n.sup.+ type semiconductor region (4) having a lower resistance than the n.sup.- type semiconductor layer (2) is formed as if surrounded by a p.sup.+ type semiconductor region (5). The dielectric layer (3) consists of a relatively thick first region (3a) and a relatively thin first region (3b). The n.sup.+ type semiconductor region (4), which is located above the first region (3a), occupies a narrower area than the first region (3a). Thus, by forming the dielectric layer thick immediately under the first semiconductor layer and controlling the thickness of the dielectric layer at other portions, the breakdown voltage of the semiconductor device is improved without curbing RESURF effect.

REFERENCES:
patent: 4970175 (1990-11-01), Haisma et al.
patent: 5110749 (1992-05-01), Ikeda
patent: 5164804 (1992-11-01), Terashima
patent: 5164805 (1992-11-01), Lee
patent: 5237193 (1993-08-01), Williams et al.
patent: 5254864 (1993-10-01), Ogawa
patent: 5256586 (1993-10-01), Choi et al.
patent: 5326991 (1994-07-01), Takasu
patent: 5343067 (1994-08-01), Nakagawa et al.
patent: 5443998 (1995-08-01), Meyer
patent: 5484738 (1996-01-01), Chu et al.

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