Dielectric diffusion barrier

Details Dielectric diffusion barrier Dielectric diffusion barrier

1997-09-24

1999-11-23

Speer, Timothy

Stock material or miscellaneous articles

Composite

Of silicon containing

428701, 428702, 428144, 428255, 428457, 438255, B32B 904

Patent

active

059897180

ABSTRACT:
Disclosed is a process for forming, over a semiconductor substrate, a multilayer structure having successively a first layer of silicon-containing material, a relatively thin oxide layer, and a second layer of silicon-containing material. The oxide layer has a substantially uniform thickness in a range from about 1 Angstrom to about 20 Angstroms. The oxide layer consists essentially of silicon dioxide that is formed by exposing the first layer to an aqueous oxidizing bath at a relatively low temperature such that diffusion of dopants in the semiconductor substrate is not induced. The oxide layer prevents dopants from outgassing and diffusing out of the first layer and into the second layer. Also disclosed is a structure formed by the disclosed process.

REFERENCES:
patent: 4943538 (1990-07-01), Mohsen et al.
patent: 5168072 (1992-12-01), Moslehi
patent: 5326722 (1994-07-01), Huang
patent: 5601656 (1997-02-01), Li

Affiliated with

Also associated with

Rating

Dielectric diffusion barrier does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Dielectric diffusion barrier, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dielectric diffusion barrier will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1219428