Dielectric device

Electricity: electrical systems and devices – Electrostatic capacitors – Fixed capacitor

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Details

257310, 257636, 257639, H01G 700, H01L 2702

Patent

active

051876361

ABSTRACT:
Si regions separated from a Si-rich SiO.sub.2 film are nitrided to provide a film mainly consisting of SiO.sub.2 regions an Si.sub.3 N.sub.4 regions to be used for constituting a dielectric device or a capacitor.

REFERENCES:
patent: 4882649 (1989-11-01), Chen et al.
patent: 4990463 (1991-02-01), Mori
patent: 4997774 (1991-03-01), Kim
patent: 5017982 (1991-05-01), Kobayashi
patent: 5023750 (1991-06-01), Hirayama

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