Dielectric deposition

Details Dielectric deposition Dielectric deposition

1991-07-10

1993-09-21

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437235, 437240, 148DIG118, H01L 2100, H01L 2102, H01L 2120, H01L 21205

Patent

active

052468879

ABSTRACT:
A method for forming a thin high quality interlevel dielectric is disclosed. The dielectric is produced in a plasma reactor utilizing a precursor gas such as TEOS. Pressure, power, temperature, gas flow, and showerhead spacing are controlled so that a dielectric of TEOS may be deposited at 60-5 .ANG. / sec, thus making formation of thin (800 .ANG.) high quality dielectrics feasible.

REFERENCES:
patent: 3934060 (1976-01-01), Burt et al.
patent: 4717596 (1988-01-01), Barbee et al.
patent: 4872947 (1989-10-01), Wang et al.

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