Dielectric composition and solder interconnection structure for

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration

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257779, H01L 29167

Patent

active

051949300

ABSTRACT:
Composition and solder interconnection structure for its use, wherein the gap created by solder connections between a carrier substrate and a semiconductor chip device mounted thereon is filled with the solvent free formulation obtained by curing a preparation containing a cycloaliphatic polyepoxide and/or curable cyanate ester or prepolymer thereof, polyol, and filler which is substantially free of alpha particle emissions.

REFERENCES:
patent: 3281491 (1966-10-01), Smith et al.
patent: 3849187 (1974-11-01), Fetscher et al.
patent: 4604644 (1986-08-01), Beckham et al.
patent: 4698402 (1987-10-01), Kordomenos et al.
patent: 4710796 (1987-12-01), Ikeya et al.
patent: 4736012 (1988-04-01), Shoji et al.
patent: 4769425 (1988-09-01), Dervan et al.
patent: 4892894 (1990-01-01), Koleske
patent: 4999699 (1991-03-01), Christie
patent: 5043221 (1992-08-01), Koleske

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