Semiconductor device manufacturing: process – Making passive device – Stacked capacitor
Reexamination Certificate
2006-02-07
2006-02-07
Pham, Hoai (Department: 2814)
Semiconductor device manufacturing: process
Making passive device
Stacked capacitor
C438S397000
Reexamination Certificate
active
06995069
ABSTRACT:
In a method for manufacturing a semiconductor storage device having a dielectric capacitor, an IrO2film, an Ir film, an amorphous film, and a Pt film—are sequentially made on an Si substrate. The SBT film may comprise Bix, Sry, Ta2.0and Oz, where the atomic ratio may be within the range of 0≦Sr/Ti≦1.0, 0≦Ba/Ti≦1.0. The Pt film, the amorphous film, the Ir film, and the IrO2film formed into a dielectric capacitor and the amorphous film is twice annealed to change its amorphous phase to a fluorite phase and then to a crystal phase of a perovskite type crystalline structure and thereby obtain the SBT film. The process may include a lower electrode made from an organic metal source material selected from a group consisting of Bi(C6H5)3, Bi(o-C7H7)3, Bi(O—C2H5)3, Bi(O—iC3H7)3, Bi(O-tC4H9)3, Bi(O-tC5H11)3, Sr(THD)2, Sr(THD)2tetraglyme, Sr(Me5C5)2. 2THF, Ti(i-OC3H7)4, TiO(THD)2, Ti(TD)2(i-OC3H7)2, Ta(i-OC3H7)5, Ta(iOC3H7)4THD, Nb(i-OC3H7)5, Nb(i-OC3H7)4THD.
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Ami Takaaki
Hironaka Katsuyuki
Isobe Chiharu
Sugiyama Masataka
Peralta Ginette
Pham Hoai
Sonnenschein Nath & Rosenthal LLP
Sony Corporation
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