Dielectric breakdown prediction and dielectric breakdown life-ti

Details Dielectric breakdown prediction and dielectric breakdown life-ti Dielectric breakdown prediction and dielectric breakdown life-ti

1993-07-15

1995-05-30

Wieder, Kenneth A.

Electricity: measuring and testing

Fault detecting in electric circuits and of electric components

Of individual circuit component or element

324719, 324765, G01R 2702, G01R 2714

Patent

active

054205131

ABSTRACT:
An accurate dielectric breakdown prediction method and a prediction method in which accurate time dependent dielectric breakdown (TDDB) characteristics can be obtained on the basis of dielectric breakdown prediction by a step stress method are provided. In this method, dielectric breakdown is predicted on the basis of a plurality of reference currents in accordance with an applied voltage, or a reference current I.sub.cr is varied as the function of the applied voltage. In the step stress TDDB prediction, a Chen-Holland-Hu model or improved Chen-Holland-Hu model is employed. Since TDDB characteristics can be obtained from only dielectric breakdown prediction, this method is advantageous for early reliability prediction.

REFERENCES:
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patent: 4906939 (1990-03-01), Berrigan et al.
patent: 5023561 (1991-06-01), Hillard
"Electrical Breakdown in Thin Gate and Tunneling Oxides"; Chen et al.; IEEE Transactions on Electron Devices, vol. Ed-32, No. 2 pp. 413-422; Feb. 1985.
"Time-Dependent Dielectric Breakdown of Thin Thermally Grown SiO.sub.2 Films"; Yamabe et al.; IEEE Transactions on Electron Devices; vol. Ed-32, No. 2; pp. 423-428; Feb. 1985.
"Time-Zero Dielectric Reliability Test by a Ramp Method"; Arnold Berman; IBM General Technology Div.; pp. 204-209; New York 1981 (month unavailable).
A. Saba et al., "On the Weak Spot Concept in the Dielectric Breakdown of Thin Polyester Films", Jul. 1989, IEEE from Conference on Conduction and Breakdown in Solid Dielectrics, pp. 72-76.

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