Dielectric barrier material

Details Dielectric barrier material Dielectric barrier material

1986-07-25

1988-01-05

Powell, William A.

Fishing, trapping, and vermin destroying

2041291, 156644, 156646, 156653, 156657, 156667, 156643, 357 71, H01L 21306, B44C 122, C03C 1500, C03C 2506

Patent

active

047174498

ABSTRACT:
Disclosed is a method of fabricating an integrated circuit. A substrate comprising a semiconductor material and having a first surface is provided. A first layer of metalization interconnects is formed on the first surface. A first thin film layer comprising a dielectric barrier material is deposited over the first layer of metalization interconnects. A second thin film layer comprising a dielectric passivating material is deposited over the first thin film layer of dielectric barrier material. A via having a width greater than the width of a metalization interconnect is then plasma etched in the dielectric passivating material using a first etch gas. The dielectric barrier material is then plasma etched using a second etch gas to remove the dielectric barrier material in the area of the via. A second layer of metalization interconnects is then formed, a metalization interconnect in each of the first and second layers of metalization interconnects being connected in the via.

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