Dielecrtric breakdown prediction apparatus and method, and diele

Details Dielecrtric breakdown prediction apparatus and method, and diele Dielecrtric breakdown prediction apparatus and method, and diele

1995-03-14

1997-01-14

Wieder, Kenneth A.

Electricity: measuring and testing

Fault detecting in electric circuits and of electric components

Of individual circuit component or element

324554, 324552, 324548, 324456, 324452, 361225, G01R 3126, G01R 2702, G01N 2760

Patent

active

055943497

ABSTRACT:
An accurate dielectric breakdown prediction method and a prediction method in which accurate time dependent dielectric breakdown (TDDB) characteristics can be obtained on the basis of dielectric breakdown prediction by a step stress method are provided. In this method, dielectric breakdown is predicted on the basis of a plurality of reference currents in accordance with an applied voltage, or a reference current I.sub.cr is varied as the function of the applied voltage. In the step stress TDDB prediction, a Chen-Holland-Hu model or improved Chen-Holland-Hu model is employed. Since TDDB characteristics can be obtained from only dielectric breakdown prediction, this method is advantageous for early reliability prediction.

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A. Saba et al., "On the Weak Spot Concept in the Dielectric Breakdown of Thin Polymer Films", Jul. 1989, IEEE from Conference on Conduction and Breakdown in Solid Dielectrics, pp. 72-76.
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Chen et al., "Electrical Breakdown in Thin Gate and Tunneling Oxides", IEEE Transactions on Electron Devices, vol. ED-32, No. 2, pp. 413-422, Feb. 1985.
Arnold Berman, "Time-Zero Dielectric Reliability Test by a Ramp Method", IBM General Technology Div., pp. 204-209, 1981.

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