Active solid-state devices (e.g. – transistors – solid-state diode – With shielding
Reexamination Certificate
2005-07-26
2005-07-26
Baumeister, Bradley (Department: 2829)
Active solid-state devices (e.g., transistors, solid-state diode
With shielding
C257S296000
Reexamination Certificate
active
06921965
ABSTRACT:
A semiconductor topography is provided which includes a magnetic field shield layer formed upon a semiconductor device. In particular, the semiconductor topography may include a ferromagnetic layer adapted to shield underlying layers from external magnetic fields. Such a ferromagnetic layer may include either ferrite and/or non-ferrite materials. In some embodiments, the semiconductor topography may include a magnetic field shield layer with a different pattern configuration than an adjacent passivation layer. Consequently, a method for processing a semiconductor topography which includes patterning a magnetic field shield layer to form openings other than bond pad openings within the semiconductor topography is provided.
REFERENCES:
patent: 4922606 (1990-05-01), Alexander et al.
patent: 5902690 (1999-05-01), Tracy et al.
patent: 6515352 (2003-02-01), Spielberger et al.
patent: 6724027 (2004-04-01), Bhattacharyya et al.
patent: 59102745 (1985-12-01), None
Jenne Frederick B.
Ray Oindrila
Baumeister Bradley
Daffer Kevin L.
Daffer McDaniel LLP
Farahani Dana
Lettang Mollie E.
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