Die separation method for silicon on diamond circuit structures

Details Die separation method for silicon on diamond circuit structures Die separation method for silicon on diamond circuit structures

1993-09-22

1996-09-03

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437226, H01L 21302

Patent

active

055523455

ABSTRACT:
Silicon on diamond die 5 are separated by patterning the diamond layer 3 and sawing the silicon layer 4. The diamond layer 3 is patterned by known techniques including laser ablation or using a silicon dioxide mask to resist deposition of diamond material. Patterning may take place after formation of microelectronic devices in dies in the silicon layer, after a device water is bonded to a diamond layer but before formation of the devices, prior to joining the device wafer to the diamond layer.

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