Die bonding

Semiconductor device manufacturing: process – Semiconductor substrate dicing – By electromagnetic irradiation

Reexamination Certificate

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Details

C438S113000, C438S118000, C257S782000, C257SE21598, C257SE21599

Reexamination Certificate

active

07989320

ABSTRACT:
A die bonding method and apparatus by which a wafer substrate11adhered to a carrier tape13by an adhesive layer12is laser machined through the wafer substrate and through the adhesive layer at most to scribe the carrier tape to form a singulated die15with an attached singulated adhesive layer, without substantial delamination of the adhesive layer12and carrier tape13or substantial production of burrs from the adhesive layer12. The carrier tape13is cured, preferably by ultraviolet light, to release the adhesive layer from the carrier tape. The singulated die is picked and placed on a die pad and the adhesive layer12is cured, preferably by heat, to adhere the die to the die pad.

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Notification of Reasons for Refusal, JP 2006-516088, Mar. 8, 2010.
Fowlkes et al., “Microstructural Evolution of Laser-Exposed Silicon Targets in SF6Atmospheres,”Applied Physics Letters, vol. 77, No. 11, pp. 1629-1631, Sep. 11, 2000.

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