Die attached process for SiC

Details Die attached process for SiC Die attached process for SiC

1996-02-13

1998-12-22

Graybill, David

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

438118, 438120, H01L 2158

Patent

active

058518525

ABSTRACT:
A die attach procedure for SiC uses the scrubbing technique to bond a SiC die to a package. A first layer is formed on the SiC die. This first layer, preferably of nickel, bonds to the SiC die. A second layer, preferably amorphous silicon, is then formed on the first layer. The second layer bonds to the first layer, and forms a eutectic with the material, usually gold, plating the package when the SiC die is scrubbed onto the package.

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Patent Abstract of Japan, Publication No. 07025673, Publication date Jan. 27, 1995 -- Nippon Cement Co., Ltd., "Method For Joining Ceramics To Silicon Plate".
Copy of International Search Report dated Jun. 20, 1997, International Appln. No. PCT/US97/01790, international filing date Jan. 31, 1997.

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