Dicing method for semiconductor substrate

Details Dicing method for semiconductor substrate Dicing method for semiconductor substrate

2011-03-08

2011-03-08

Landau, Matthew C (Department: 2813)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Substrate dicing

C438S068000, C438S113000, C438S114000, C438S458000

Reexamination Certificate

active

07901967

ABSTRACT:
A method for dicing a semiconductor substrate includes: forming a reforming layer in the substrate by irradiating a laser beam on the substrate; forming a groove on the substrate along with a cutting line; and applying a force to the substrate in order to cutting the substrate at the reforming layer as a starting point of cutting. The groove has a predetermined depth so that the groove is disposed near the reforming layer, and the force provides a stress at the groove.

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