Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
Reexamination Certificate
2007-11-20
2007-11-20
Purvis, Sue A. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular semiconductor material
C257S097000, C257S099000, C257S101000, C257S102000, C438S384000, C438S393000, C438S791000, C372S043010
Reexamination Certificate
active
10525753
ABSTRACT:
Disclosed are a diboride single crystal substrate which has a cleavage plane as same as that of a nitride compound semiconductor and is electrically conductive; a semiconductor laser diode and a semiconductor device using such a substrate and methods of their manufacture wherein the substrate is a single crystal substrate1of diboride XB2(where X is either Zr or Ti) which is facially oriented in a (0001) plane2and has a thickness of 0.1 mm or less. The substrate1is permitted cleaving and splitting along a (10-10) plane4with ease. Using this substrate to form a semiconductor laser diode of a nitride compound, a vertical structure device can be realized. Resonant planes of a semiconductor laser diode with a minimum of loss can be fabricated by splitting the device in a direction parallel to the (10-10) plane. A method of manufacture that eliminates a margin of cutting is also realized.
REFERENCES:
patent: 1 176 231 (2002-01-01), None
patent: 1 176 231 (2002-01-01), None
patent: 2001-253800 (2001-09-01), None
patent: 2003-163375 (2003-06-01), None
Shigeki Otani et al., “Chisso Gallium to Koshi Seigo Suru Niho-ka Zirconium Kiban” Jun. 1, 2002, vol. 50, No. 6, pp. 97-100.
J. Suda et al., Journal of Crystal Growth, 237-239, (2002) pp. 1114-1117.
Akasaki Isamu
Amano Hiroshi
Kamiyama Satoshi
Kinoshita Hiroyuki
Matsunami Hiroyuki
Erdem Fazli
Kyocera Corporation
National Institute for Materials Science
Purvis Sue A.
Westerman, Hattori, Daniels & Adrian , LLP.
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