Diaphragm formation on silicon substrate

Details Diaphragm formation on silicon substrate Diaphragm formation on silicon substrate

1974-04-11

1976-03-02

Drummond, Douglas J.

Adhesive bonding and miscellaneous chemical manufacture

Methods

156 17, 357 26, C23F 102

Patent

active

039416291

ABSTRACT:
A method of making thin diaphragms having an accurately controllable thickness for semiconductor pressure responsive devices. An oxide coating is thermally grown in selected regions on the front side of a silicon wafer. The oxide extends into the wafer at an extremely accurate and controllable depth to form a groove in the wafer front side defined by the selected regions. Portions of the wafer are then etched from the back side until the bottom of the groove is reached thereby providing a diaphragm having a thickness equal to the accurately reproducible depth of the groove.

REFERENCES:
patent: 3032753 (1962-05-01), Knapp et al.
patent: 3810796 (1974-05-01), Skaggs et al.
patent: 3819431 (1974-06-01), Kurtz et al.
J. Hoekstra, "Metal Etch Monitor," IBM Technical Disclosure Bulletin, Vol. 14, No. 9, Feb. 1972, pp. 2680-2682.
M. Chwalow, "Etch Completion Indication," IBM Technical Disclosure Bulletin, Vol. 15, No. 2, July 1972, pp. 606-607.

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