Diaphragm-based-sensors

Details Diaphragm-based-sensors Diaphragm-based-sensors

1991-02-07

1994-03-22

Woodiel, Donald O.

Measuring and testing

Fluid pressure gauge

Diaphragm

73727, 92103SD, 338 4, G01L 1302

Patent

active

052953955

ABSTRACT:
The formation of diaphragms by silicon wafer bonding provides for a structure having at least two such diaphragms with cavities in the wafers to which the diaphragm layer is bonded. Passageways through the wafers provide for communication of a fluid to the diaphragms. In some locations less than all of a plurality of diaphragms may be bonded to only one wafter having a cavity adjacent the diaphragm.

REFERENCES:
patent: 4730496 (1988-03-01), Knecht et al.
patent: 4744863 (1988-05-01), Guckel et al.
patent: 4790192 (1988-12-01), Knecht et al.
patent: 5029479 (1991-07-01), Bryan
Scaling Limitations of Submicron Local Oxidation Technology, Hui, et al, IEEE, IDEM, 1985 pp. 392-395.
The SWAMI-A Defect-Free and Near-Zero Bird's Beak Local Oxidation Process and its Application in VLSI Technology, Chiu, et al, IEEE, IDEM, 1982, pp. 224-227.
German Publication WO-A-9 116 608 (Robert Bosch GMBH), Priority Date Apr. 14, 1990.
Wescon Conference Record-Silicon Fusion Bonding: Revolutionary New Tool for Silicon Sensors and Microstructures Dr. Kurt Petersen & Dr. Phillip Barth, Nov., 1989.
European Patent Application 0 341 964 A3, H. Furubayashi, et al, Filed May 5, 1989.
Patent Abstracts of Japan, No. JP 2122675 (Fuji Electric Company Limited) published on May 10, 1990.
German Publication WO-A-9009677, Guckel, et al, filed Feb. 2, 1990.

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