Diamond ultraviolet luminescent element

Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide

Reexamination Certificate

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Details

C257S103000

Reexamination Certificate

active

06872981

ABSTRACT:
A diamond ultraviolet luminescent element (10) having a current-injection light-emitting diode structure includes a high-quality boron-doped p-type diamond crystal (semiconductor layer) (1) synthesized by the high pressure and high temperature method; a phosphorous-doped n-type diamond crystal (n-type semiconductor layer) (3) formed on the first diamond surface by the chemical vapor deposition; an electrode (5) formed on the surface of the n-type semiconductor layer (3); and an electrode (7) formed on the surface of the p-type semiconductor layer (1). The luminescence (235 nm) attributed to the recombination of free excitons resulting from current injection dominates in ultraviolet wavelength region (10).

REFERENCES:
patent: 5223721 (1993-06-01), Iida et al.
patent: 5389799 (1995-02-01), Uemoto
patent: 5500539 (1996-03-01), Kadono et al.
patent: 6433474 (2002-08-01), Horiuchi
patent: 0377320 (1990-07-01), None
patent: 0390209 (1990-10-01), None
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patent: 02-017631 (1990-01-01), None
patent: 03-165074 (1991-07-01), None
patent: 04-240784 (1992-08-01), None
patent: 05-140550 (1993-06-01), None
patent: 05-152604 (1993-06-01), None
patent: 07-307487 (1995-11-01), None
International Search Report dated Oct. 3, 2000.

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