Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide
Reexamination Certificate
2005-03-29
2005-03-29
Munson, Gene M. (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
Diamond or silicon carbide
C257S103000
Reexamination Certificate
active
06872981
ABSTRACT:
A diamond ultraviolet luminescent element (10) having a current-injection light-emitting diode structure includes a high-quality boron-doped p-type diamond crystal (semiconductor layer) (1) synthesized by the high pressure and high temperature method; a phosphorous-doped n-type diamond crystal (n-type semiconductor layer) (3) formed on the first diamond surface by the chemical vapor deposition; an electrode (5) formed on the surface of the n-type semiconductor layer (3); and an electrode (7) formed on the surface of the p-type semiconductor layer (1). The luminescence (235 nm) attributed to the recombination of free excitons resulting from current injection dominates in ultraviolet wavelength region (10).
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International Search Report dated Oct. 3, 2000.
Horiuchi Kenji
Ide Takahiro
Ishikura Takefumi
Kawamura Aki
Nakamura Kazuo
Munson Gene M.
Tokyo Gas Co. Ltd.
Westerman Hattori Daniels & Adrian LLP
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