Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
Reexamination Certificate
2006-03-07
2006-03-07
Wille, Douglas (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular semiconductor material
C257S077000, C257S088000
Reexamination Certificate
active
07009219
ABSTRACT:
A small, simple current-injection diamond ultraviolet light-emitting device comprising a high-quality diamond grown by chemical vapor deposition (CVD) method (1), a surface conductive layer (2) provided on the surface of the diamond, and electrodes (4, 5) provided on the surface conductive layer. The device is a free-exciton recombination emission diamond ultraviolet light-emitting device comprising a CVD diamond crystal where the free-exciton recombination radiation (235 nm) caused by current injection is dominant.
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International Search Report dated Sep. 20, 2000.
Horiuchi Kenji
Ide Takahiro
Ishikura Takefumi
Kawamura Aki
Nakamura Kazuo
Tokyo Gas Co. Ltd.
Wille Douglas
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