Diamond synthesis from silicon carbide

Details Diamond synthesis from silicon carbide Diamond synthesis from silicon carbide

1991-11-25

1998-05-26

Lewis, Michael

Chemistry of inorganic compounds

Carbon or compound thereof

Elemental carbon

117 6, C01B 3106, B01J 306

Patent

active

057560617

ABSTRACT:
Diamonds are synthesized from SiC at temperatures and/or pressures lower than those required to convert amorphous carbon or graphite to diamond, by heating the SiC in the absence of another non-diamondaceous source of elemental carbon and in the presence of a reactant which selectively reacts with the Si at the temperature to which the SiC is heated, and in a matrix which is frangible when cooled, while the Sic is within the diamond stable region of the diamond-graphite phase diagram, thereby permitting the diamond to be separated therefrom by physical means.

REFERENCES:
patent: 4228142 (1980-10-01), Holocombe, Jr. et al.
patent: 4485080 (1984-11-01), Shingh et al.
patent: 4803123 (1989-02-01), Harada
patent: 5128080 (1992-07-01), Jurewicz et al.

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