Diamond synthesis

Details Diamond synthesis Diamond synthesis

1996-12-19

1998-06-30

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Havin growth from molten state

117929, 423446, C30B 2904

Patent

active

057727562

ABSTRACT:
A method of producing diamond crystal growth on a seed crystal is provided. The method includes the steps of providing a seed crystal containing at least one twin plane and re-entrant growth surfaces associated therewith and applying high temperature/high pressure synthesis conditions to the seed crystal to cause diamond growth to occur preferentially on the re-entrant surfaces. The diamond growth on the seed crystal results in a diamond crystal being produced which has an aspect ratio greater than 1.

REFERENCES:
patent: 3297407 (1967-01-01), Wentorf, Jr.
patent: 4034066 (1977-07-01), Strong et al.
patent: 4073380 (1978-02-01), Strong et al.
patent: 4287168 (1981-09-01), Wentorf, Jr. et al.
patent: 4301134 (1981-11-01), Strong
patent: 4322396 (1982-03-01), Strong
patent: 4340576 (1982-07-01), Strong
patent: 4425315 (1984-01-01), Tsuji et al.
patent: 4485080 (1984-11-01), Shingu et al.
patent: 4632817 (1986-12-01), Yazu et al.

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