Diamond substrates having metallized vias

Electricity: conductors and insulators – Conduits – cables or conductors – Preformed panel circuit arrangement

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174255, 174257, 174264, 257507, H05K 100

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active

053827589

ABSTRACT:
A process for making metallized vias in diamond substrates is disclosed. The process involves laser-drilling a plurality of holes in a CVD diamond substrate and depositing tungsten, or a similar refractory metal, in the holes by low pressure CVD to provide substantially void-free metallized vias. Diamond substrates having metallized vias are also disclosed. The structures are useful for making multichip modules for high clock rate computers.

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patent: 5239746 (1993-08-01), Goldman
Chemical Abstracts, vol. 104, No. 6, Feb. 10, 1986, Columbus, Ohio, US; Abstract No. 38695j, Evstyukhin et al., "Metalization of Diamond By Chemical Transport Reactions In A Transition Metal Halide Gas Phase", p. 309.
Wilson et al., "Highly Selective, High Rate Tungsten Deposition Using `hot plate` Wafer Heating", Tungsten and Other Refractory Metals for VLSII III, pp. 311-316, VA Wells (Editor), 1988, Materials Research Society, Pittsburgh, Pa. US.
Eden, "Applicability of Diamond Substrates to Multi-Chip Modules", ISHM '91 Proceedings.
Das et al., "A Review of the Electrical Characteristics of Metal Contacts on Diamond", Thin Solid Films, 212, 19-24 (1992).
Roser et al., "High Temperature Reliability of Refractory Metal Ohmic Contacts of Diamond", J. Electrochem. Soc., 139 (1992).
Malshe et al., "Excimer Laser-Induced Etching of Non-Hydrogenated (a-C) and Hydrogenated (a-C:H) Diamond-Like Carbon Films: A Comparative Study", Materials Letters, 11, 175-179 (1991).
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Bogli et al., "Smoothering of Diamond Films With An ArF Laser", Diamond and Related Materials, 1, 782-788 (1992).

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