Diamond sintered compact

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Reexamination Certificate

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C051S307000, C051S309000, C428S332000, C428S408000, C428S469000, C428S698000, C428S701000

Reexamination Certificate

active

07985470

ABSTRACT:
An object is to raise both the wear resistance and chipping resistance of diamond sintered compacts while taking advantage of the characteristics of highly chipping-resistant microfine-grain diamond sintered compacts. A sintered diamond layer3is formed by sintering diamond grains and a binder on a cemented carbide substrate2. This sintered diamond layer3comprises a main diamond layer4and a Co-rich diamond layer5that is present between the main diamond layer4and the cemented carbide substrate2and that has a Co content larger than that of the main diamond layer4; the main diamond layer has a residual compressive stress of 1.5 GPa to 3 GPa.

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Japanese Office Action issued in Japanese Patent Application No. 2005-350794, mailed Jan. 5, 2010.

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