Diamond single crystal substrate

Details Diamond single crystal substrate Diamond single crystal substrate

2009-02-03

2010-10-05

Mayes, Melvin C (Department: 1793)

Chemistry of inorganic compounds

Carbon or compound thereof

Elemental carbon

C117S089000, C117S094000, C117S095000, C117S096000, C117S105000

Reexamination Certificate

active

07807126

ABSTRACT:
A method for manufacturing a diamond single crystal substrate, in which a single crystal is grown from a diamond single crystal serving as a seed substrate by vapor phase synthesis, said method comprising: preparing a diamond single crystal seed substrate which has a main surface whose planar orientation falls within an inclination range of not more than 8 degrees relative to a {100} plane or a {111} plane, as a seed substrate; forming a plurality of planes of different orientation which are inclined in the outer peripheral direction of the main surface relative to the main surface on one side of this seed substrate, by machining; and then growing a diamond single crystal by vapor phase synthesis.

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Posthill et al., “Demonstration of a method to fabricate a large-area diamond single crystal,” Thin Solid Films, Dec. 15, 1995, p. 39-49, vol. 271, No. 1, Elsevier Science S.A.
European Office Action issued in European Patent Application No. EP 06 251 555..6-1215 dated on Jun. 26, 2008.

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