Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With a step of measuring – testing – or sensing
Reexamination Certificate
2011-06-07
2011-06-07
Kunemund, Robert M (Department: 1714)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With a step of measuring, testing, or sensing
C117S089000, C117S094000, C117S095000, C117S096000
Reexamination Certificate
active
07955434
ABSTRACT:
A diamond single crystal substrate obtained by a vapor-phase growth method, wherein the diamond intrinsic Raman shift of the diamond single crystal substrate surface measured by microscopic Raman spectroscopy with a focused beam spot diameter of excitation light of 2 μm is deviated by +0.5 cm−1or more to +3.0 cm−1or less from the standard Raman shift quantity of strain-free diamond, in a region (region A) which is more than 0% to not more than 25% of the surface, and is deviated by −1.0 cm−1or more to less than +0.5 cm−1from the standard Raman shift quantity of strain-free diamond, in a region (region B) of the surface other than the region A. The diamond single crystal substrate can be obtained with a large size and high-quality without cracking and is suitable for semiconductor materials, electronic components, and optical components or the like.
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Posthill, J.B., et al. “Demonstration of a method to fabricate a large-area diamond single crystal,” Thin Solid Films, Dec. 15, 1995, pp. 39-49, vol. 271, No. 1/2, Elsevier-Sequoia S.A., Lausanne.
Jiang X., et al. “Deposition of heteropitaxial diamond films on 2 in silicon substrates,” Diamond and Related Materials, Apr. 1996, pp. 251-255, vol. 5, No. 3-5, Elsevier Science Publishers, Amsterdam.
Imai Takahiro
Meguro Kiichi
Yamamoto Yoshiyuki
Kunemund Robert M
McDermott Will & Emery LLP
Sumitomo Electric Industries Ltd.
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