Diamond shorting contact for semiconductors

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357 20, 357 238, 357 52, 357 68, 357 86, 357 88, H01L 2978, H01L 2348

Patent

active

049511017

ABSTRACT:
A diamond-shaped short contact overlapping two differing conductivity regions in a semiconductor. The shape and orientation providing maximum alignment tolerances for a given size of contact opening.

REFERENCES:
patent: 4589002 (1986-05-01), Olmstad
patent: 4641168 (1987-02-01), Yilmaz
patent: 4825266 (1987-07-01), Whight
patent: 4833513 (1989-05-01), Sasaki
"Silconix Underacts Power MOSFET Industry", Electronic Engineering (Feb. 1983), p. 15.

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