Diamond semiconductor device having a non-doped diamond layer fo

Details Diamond semiconductor device having a non-doped diamond layer fo Diamond semiconductor device having a non-doped diamond layer fo

1992-05-18

1994-04-26

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

257471, 257485, 257613, H01L 310312, H01L 27095, H01L 2948, H01L 2912

Patent

active

053069285

ABSTRACT:
A semiconductor device utilizing a non-doped diamond layer between a substrate and an active diamond layer. Such a structure decreases the resistivity and increases the carrier density. Further, when contacts are formed on the active layer, this layer structure reduces reverse leak current.

REFERENCES:
patent: 4863529 (1989-09-01), Imai et al.
patent: 4929986 (1990-05-01), Yoder
patent: 4947220 (1990-08-01), Yoder
patent: 4981818 (1991-01-01), Anthony et al.
patent: 4982243 (1991-01-01), Nakahata et al.
patent: 5117267 (1992-05-01), Kimoto et al.
patent: 5142350 (1992-08-01), Heremans et al.
patent: 5144380 (1992-09-01), Kimoto et al.
A. T. Collins, "Diamond Electronic Devices-A-Critical Appraisal", Semiconductor Science and Tech., Aug. (1989), pp. 605-611.

Affiliated with

Also associated with

Rating

Diamond semiconductor device having a non-doped diamond layer fo does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Diamond semiconductor device having a non-doped diamond layer fo, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Diamond semiconductor device having a non-doped diamond layer fo will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1713606