Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide
Reexamination Certificate
2006-06-20
2006-06-20
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
Diamond or silicon carbide
C438S105000
Reexamination Certificate
active
07064352
ABSTRACT:
A diamond semiconductor device includes a substrate made of single crystal diamond; a first diamond layer, placed on the substrate, containing an impurity; a second diamond layer containing the impurity, the second diamond layer being placed on the substrate and spaced from the first diamond layer; and a third diamond layer which has a impurity content less than that of the first and second diamond layers, which acts as a channel region, and through which charges are transferred from the first diamond layer to the second diamond layer. The first and second diamond layers have a first and a second end portion, respectively, facing each other with a space located therebetween. The first and second end portions have slopes epitaxially formed depending on the orientation of the substrate. The third diamond layer lies over the slopes and a section of the substrate that is located under the space.
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Hayashi Kazushi
Kawakami Nobuyuki
Tachibana Takeshi
Yokota Yoshihiro
A. Marquez, Esq. Juan Carlos
Fisher Esq. Stanley P.
Kabushiki Kaisha Kobe Seiko Sho
Lee Calvin
Nelms David
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