Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide
Patent
1992-03-27
1994-03-29
James, Andrew J.
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
Diamond or silicon carbide
257255, 257280, 257410, 361704, 361707, H01L 4900, H01L 2702, H02B 100
Patent
active
052987655
ABSTRACT:
Disclosed herein is a diamond Schottky gate type field effect transistor (FET) comprising: an insulating diamond under layer; a doped semiconducting diamond layer as an active layer, which has electrode areas formed by ion implantation such that the interface level is formed near the surface thereof; an insulating diamond layer formed on a portion of the semiconducting diamond layer; a source electrode made of a degenerate diamond film provided in one of the electrode areas of the semiconducting diamond layer, to form an ohmic contact between the same and the semiconducting diamond layer; a drain electrode made of a degenerate diamond film provided in the other of the electrode areas of the semiconducting diamond layer, to form an ohmic contact between the same and the semiconducting diamond layer; and a gate electrode made of a degenerate diamond film formed on the insulating diamond layer, to form a Schottky junction between the same and the semiconducting diamond layer through the diamond insulating layer.
REFERENCES:
patent: 5144380 (1992-09-01), Kimoto et al.
Japanese Journal of Applied Physics, vol. 28, No. 12, Dec., 1989, pp. L2153-L2154, H. Shiomi, et al., "Field-Effect Transistors Using Boron-Doped Diamond Epitaxial Films".
James Andrew J.
Kabushiki Kaisha Kobe Seiko Sho
Martin Valencia M.
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