Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide
Patent
1992-09-02
1994-02-08
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
Diamond or silicon carbide
257414, 257485, 257475, 204431, 204432, 204424, 204419, H01L 2966
Patent
active
052850846
ABSTRACT:
Schottky diodes and gas sensors include a diamond layer having a Schottky contact thereon and an ohmic contact thereon, wherein the diamond layer includes a highly doped region adjacent the ohmic contact to provide a low resistance ohmic contact. Dramatically reduced frequency dependence of the capacitance/voltage characteristic of Schottky diodes and gas sensors formed thereby, compared to Schottky diodes and gas sensors which do not include the highly doped region adjacent the ohmic contact, is provided. The highly doped region is preferably boron doped at a concentration of at least 10.sup.20 atoms per cubic centimeter to form an ohmic contact with a contact resistance of less than 10.sup.-3 .OMEGA.-cm.sup.2. The ohmic contact is preferably a back contact on the face of the diamond layer opposite the Schottky contact.
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"A Thermally Activated Solid State Reaction Process for Fabricating Ohmic Contacts to Semiconducting Diamond," J. Appl. Physics, 68(5), Sep. 1990, pp. 2246-2254, Moazed et al.
Use of Electroreflectance Technique in Pt/GaAs Schottky Barrier Sensor Characterization, Lechuga et al., Sensors and Actuators, vol. 32, pp. 354-356, 1992.
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Electrical Characteristics of Schottky Diodes Fabricated Using Plasma Assisted Chemical Vapor Deposited Diamond Films, Gildenblat et al., Appl. Phys. Lett. vol. 53, No. 7, pp. 586-588, 1986.
A Thermally Activated Solid State Reaction Process for Fabricating Ohmic Contacts to Semiconducting Diamond, Moazed et al., J. Appl. Phys., vol. 68, No. 5, pp. 2246-2254, 1990.
Metal-Intrinsic Semiconductor-Semiconductor Structures Using Polycrystalline Diamond Films, Miyata et al., Appl. Phys. Letter., vol. 60, No. 4, pp. 480-482, 1992, Jun.
Effect of Thin Interfacial SiO.sub.2 Films on Metal Contacts to B-Doped Diamond Films, Fountain et al., J. Electrochem. Soc., vol. 139, No. 5, pp. 1445-1449, May, 1992.
Capacitance-Voltage Measurements on Metal-SiO.sub.2 Diamond Structures Fabricated with (100)-and (111)-Oriented Substrates, Geis et al., IEEE Transactions on Electron Devices, vol. 38, No. 3, pp. 619-626, 1991.
Venkatesan Vasudev
von Windheim Jesko
Kobe Steel USA
Mintel William
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