Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Schottky barrier to polycrystalline semiconductor material
Patent
1993-11-03
1994-10-04
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Schottky barrier to polycrystalline semiconductor material
257 76, 257 77, 257485, H01L 2948
Patent
active
053529081
ABSTRACT:
A diamond Schottky diode including an electrically conductive substrate, a multi-layer structure of a semiconducting diamond layer and an insulating diamond layer, and a metal electrode. This diode has a greater potential barrier under a reversed bias and hence exhibits better rectifying characteristics with a smaller reverse current.
REFERENCES:
patent: 4982243 (1991-01-01), Nakahata et al.
patent: 5002899 (1991-03-01), Geis et al.
patent: 5072264 (1991-12-01), Jones
patent: 5086014 (1992-02-01), Miyata et al.
patent: 5107315 (1992-04-01), Kumagai et al.
patent: 5132749 (1992-07-01), Nishibayashi et al.
Kobashi Koji
Miyata Koichi
Nishimura Kozo
Kabushiki Kaisha Kobe Seiko Sho
Mintel William
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