Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide
Patent
1994-09-28
1996-02-20
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
Diamond or silicon carbide
257 64, 257 73, H01L 2904
Patent
active
054931312
ABSTRACT:
The rectifying element is comprised of two electrodes, an undoped diamond film, and a B-doped p-type diamond film. The diamond films are formed of highly-oriented diamond films, of which at least 80% of the surface area consists of (100) or (111) crystal planes, and the differences {.DELTA..alpha., .DELTA..beta., .DELTA..gamma.} of Euler angles {.alpha., .beta., .gamma.}, which represent the orientations of crystal planes, simultaneously satisfy .vertline..DELTA..alpha..vertline..ltoreq.5.degree., .vertline..DELTA..bet a..vertline..ltoreq.5.degree. and .vertline..DELTA..gamma..vertline..ltoreq.5.degree. between adjacent crystal planes. The diamond rectifying element thus constructed have an excellent electrical characteristics, and multiple of the elements can be produced on a large area at low cost. The diamond rectifying elements can be used for heat-resistant and high-power rectifying elements.
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Dreifus David L.
Miyata Koichi
Saito Kimitsugu
Bowers Courtney A.
Crane Sara W.
Kobe Steel USA Inc.
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