Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide
Patent
1993-02-23
1994-01-11
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
Diamond or silicon carbide
257471, 257485, 257750, 257764, H01L 310312, H01L 27095, H01L 2948, H01L 2348
Patent
active
052784312
ABSTRACT:
A rectifying contact includes a first semiconducting diamond layer, a second undoped diamond layer on the first layer, and a third relatively highly doped diamond layer on the second layer. The first semiconducting diamond layer may be formed on a supporting substrate. A bonding contact is preferably formed on the third relatively highly doped diamond layer for facilitating electrical connection thereto. The bonding contact is preferably a titanium carbide/gold bilayer. In one embodiment, an ohmic contact may be formed on the first semiconducting diamond layer by an electrically conductive substrate and an associated metal layer on an opposite side of the substrate from the semiconducting diamond layer. In another embodiment, an ohmic contact may be formed on the first semiconducting diamond layer by a fourth relatively highly doped diamond layer and an associated bonding contact on the fourth diamond layer. The relatively highly doped diamond layers may be formed by ion implantation, annealing, and an etch of a graphitized surface portion of the implanted diamond layers.
REFERENCES:
patent: 4982243 (1991-01-01), Nakahata
patent: 5132749 (1992-07-01), Nishibayashi et al.
patent: 5155559 (1992-10-01), Humphries et al.
patent: 5173761 (1992-12-01), Dreifus et al.
Geis, "High-Temperature Point-Contact Transistors and Schottky Diodes Formed on Synthetic Boron-Doped Diamond", IEEE Electron Device Letters, vol. EDL-8, No. 8, pp. 341-343, Aug. 1987.
Shiomi et al., "Characterization of Boron-Doped Diamond Epitaxial Films and Applications for High-Voltage Schottky Diodes and MESFET's", New Diamond Science and Technology, 1991 MRS Int. Conf. Proc., pp. 975-980.
Gildenblatt et al., "High Temperature Schottky Diodes with Boron-Doped Homoepitaxial Diamond Base", Mat. Res. Bul., vol. 25, pp. 129-134 (1990).
Miyata et al., "Metal-Insulator-Semiconductor Diodes Using Polycrystalline Diamond Thin Films", presented at the ECS Meeting, Washington, D.C., 1981.
Hewett et al., "Fabrication of an Insulated Gate Diamond FET for High Temperature Applications", presented at the International High Temperature Electronics Conference in Albuquerque, N. Mex., pp. 168-173, Jun. 1991.
Geis, "Diamond Transistor Performance and Fabrication", Proceeding of the IEEE, vol. 79, No. 5, May 1991.
Prins, "Preparation of Ohmic Contacts to Semiconducting Diamond", Schonland Research Centre, University of Witwaterstrand, Johannesburg 2050, South Africa, Jul. 1989, pp. 1562-1564.
Venkatesan et al., "Effect of Thin Interfacial SiO.sub.2 Films on Metal Contacts to B-Doped Diamond Films", Journal of the Electrochemical Society, vol. 139, No. 5, May 1992.
Gildenblat et al., "High-Temperature Thin-Film Diamond Field-Effect Transistor Fabricated Using a Selective Growth Method", IEEE Electron Device Letters, vol. 12, No. 2, Feb. 1991.
Kobe Development Corporation
Loke Steven
Mintel William
LandOfFree
Diamond rectifying contact with undoped diamond layer does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Diamond rectifying contact with undoped diamond layer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Diamond rectifying contact with undoped diamond layer will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1633296