Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1992-08-24
1994-08-02
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 77, 257 94, H01L 3300, H01L 29161
Patent
active
053348559
ABSTRACT:
A light emitting diode including a carrier injection layer of semiconductor material, such as diamond, and a light emitting layer of polycrystalline phosphor, such as zinc oxide, positioned to form a diode junction therebetween. The semiconductor material being selected to have a wider bandgap than the polycrystalline phosphor and the materials being further selected to minimize the discontinuities at the junction which would cause energy spikes.
REFERENCES:
patent: 5034784 (1991-07-01), Yamazaki
patent: 5131065 (1992-07-01), Briggs et al.
Jaskie James E.
Legge Ronald N.
Moyer Curtis D.
Jackson Jerome
Monin D.
Motorola Inc.
Parsons Eugene A.
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