Diamond n-type semiconductor diamond p-n junction diode

Details Diamond n-type semiconductor diamond p-n junction diode Diamond n-type semiconductor diamond p-n junction diode

1992-02-07

1993-06-29

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

257607, H01L 2990

Patent

active

052237214

ABSTRACT:
A diamond n-type semiconductor including a substrate and a phosphorus element-doped diamond thin film disposed on the substrate. The diamond thin film is deposited by vaporizing a solution comprising a liquid organic compound as the diamond material with diphosphorus pentoxide (P.sub.2 O.sub.5) dissolved therein, and subjecting the resultant gas to a hot filament CVD method.

REFERENCES:
patent: 4571447 (1986-02-01), Prins
patent: 5051785 (1991-09-01), Beetz, Jr. et al.
patent: 5075757 (1991-12-01), Ishii et al.
patent: 5117267 (1992-05-01), Kimoto et al.
patent: 5132749 (1992-07-01), Nishibayashi et al.

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