Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating
Patent
1994-03-16
1995-02-21
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
With means to control surface effects
Insulating coating
257 77, 257676, 257758, 257763, 257774, 257776, H01L 2934, H01L 3902
Patent
active
053919149
ABSTRACT:
Diamond is used as a dielectric layer to separate the metalization layers multichip module substrates. The diamond has use for both electrical and thermal conduction. Such multichip module substrates may have a diamond base, or a base constructed from silicon, aluminum nitride, molybdenum, or any other material supportive of the nucleation and growth of diamond films. The metalization may be molybdenum or other conductor supportive of the nucleation and growth of diamond films. Using diamond as an interlayer dielectric in a multichip system permits a significant increase in the amount of power that can be dissipated by the system. The diamond does not obstruct the system's metalization, so that routing density can be increased and interconnection length may be decreased, enhancing host chip operation.
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Reaves Pat H.
Sullivan Patrick M.
Fendelman Harvey
Keough Thomas Glenn
Lipovsky Peter A.
Ngo Ngan V.
The United States of America as represented by the Secretary of
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