Semiconductor device manufacturing: process – Having diamond semiconductor component
Reexamination Certificate
2006-01-11
2010-11-09
Richards, N Drew (Department: 2895)
Semiconductor device manufacturing: process
Having diamond semiconductor component
C438S514000, C438S555000, C438S549000
Reexamination Certificate
active
07829377
ABSTRACT:
Masked and controlled ion implants, coupled with annealing or etching are used in CVD formed single crystal diamond to create structures for both optical applications, nanoelectromechanical device formation, and medical device formation. Ion implantation is employed to deliver one or more atomic species into and beneath the diamond growth surface in order to form an implanted layer with a peak concentration of atoms at a predetermined depth beneath the diamond growth surface. The composition is heated in a non-oxidizing environment under suitable conditions to cause separation of the diamond proximate the implanted layer. Further ion implants may be used in released structures to straighten or curve them as desired. Boron doping may also be utilized to create conductive diamond structures.
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Abrahams John M.
Doering Patrick J.
Dromeshauser William W.
Genis Alfred R.
Linares Bryant
Apollo Diamond, Inc
Diallo Mamadou
Richards N Drew
Schwegman Lundberg & Woessner, P.A.
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