Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Havin growth from molten state
Reexamination Certificate
2007-09-04
2007-09-04
Kunemund, Robert (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Havin growth from molten state
C117S073000, C117S074000, C117S075000, C117S076000, C117S929000, C423S446000
Reexamination Certificate
active
11150071
ABSTRACT:
In a diamond manufacturing method, a melt of carbon and blue kimberlite is contained in a vessel at 1000° C. The vessel is pressurized by a gas of predominantly hydrogen to 200 atmospheres. A crystallization seed is drawn from the melt to generate a piece of diamond material.
REFERENCES:
patent: 4287168 (1981-09-01), Wentorf et al.
patent: 4617181 (1986-10-01), Yazu et al.
Lewis Richard L
Zakinov Leon
Coleman Henry D.
Kunemund Robert
Sapone William J.
Sudol R. Neil
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