Diamond-like carbon for use in VLSI and ULSI interconnect system

Details Diamond-like carbon for use in VLSI and ULSI interconnect system Diamond-like carbon for use in VLSI and ULSI interconnect system

1994-07-12

1996-09-24

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

257646, 257758, 257774, H01L 310312

Patent

active

055593674

ABSTRACT:
The present invention relates to semiconductor devices comprising as one of their structural components diamond-like carbon as an insulator for spacing apart one or more levels of a conductor on an integrated circuit chip. The present invention also relates to a method for forming an integrated structure and to the integrated structure produced therefrom. The present invention further provides a method for selectively ion etching a diamond-like carbon layer from a substrate containing such a layer.

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