Diamond light-emitting element

Details Diamond light-emitting element Diamond light-emitting element

1996-02-12

1997-03-18

Tran, Minhloan

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

257101, 257102, 257103, 257607, H01L 310312

Patent

active

056125488

ABSTRACT:
A diamond light-emitting element capable of intense light emission at low operation voltage. A conductive substrate is disposed on a metallic plate such as copper to form an ohmic contact. A first diamond layer is formed on the conductive substrate. The boron atom concentration in the first diamond layer is 10.sup.19 cm.sup.-3 or higher. A second diamond layer is formed on the first diamond layer. The second diamond layer has a crystal defect density of 10.sup.11 cm.sup.-2 or higher. A second electrode is formed on the second diamond layer. A power supply is connected to the second electrode and the copper plate. When voltage is applied, holes in the first diamond layer recombine with electrons from the second electrode, and hence light emission takes place. The defect levels in the second diamond layer form the recombination centers to achieve high brightness at low operation voltage.

REFERENCES:
patent: 5252840 (1993-10-01), Shiomi et al.

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