Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide
Patent
1992-03-20
1994-03-29
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
Diamond or silicon carbide
257 12, 257183, 257485, H01L 2948, H01L 2956
Patent
active
052987663
ABSTRACT:
A diamond heterojunction diode having an improved rectifying characteristics with a small reverse current and a large forward current. Three layers are formed on a low-resistance p-type silicon substrate by the microwave plasma CVD in the order of a B-doped p type semiconducting diamond layer, an insulating undoped diamond layer (thinner than 1 .mu.m), and an n-type semiconducting silicon layer. Ohmic electrodes are formed on the front side of a n-type semiconducting silicon layer and the back side of a substrate. Under a forward bias, the electric field is applied to the intermediate insulating layer to accelerate the transport of holes and electrons. Under a reversed bias, the energy band has a notch as well as a potential barrier due to the intermediate layer thus preventing holes from transporting from the n-type semiconducting diamond layer to the p-type semiconducting diamond layer, resulting in the improved rectifying characteristics.
REFERENCES:
patent: 4903102 (1990-02-01), Yamazaki
patent: 5107315 (1992-04-01), Kumagai et al.
patent: 5144380 (1992-09-01), Kimoto et al.
Appl. Phys. Letters, vol. 58, No. 8, Feb. 25, 1991, Ken Okano, et al., "p-n Junction Diode Made Of Semiconducting Diamond Films", pp. 840-841.
Katoh Rie
Kobashi Koji
Kumagai Kazuo
Miyauchi Shigeaki
Nishimura Kozo
Hille Rolf
Kabushiki Kaisha Kobe Seiko Sho
Tran Minhloan
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