Diamond growth method

Details Diamond growth method Diamond growth method

1990-08-06

1992-05-19

Kunemund, Robert

Chemistry of inorganic compounds

Carbon or compound thereof

Elemental carbon

156612, 156614, 156DIG68, B01J 306

Patent

active

051146967

ABSTRACT:
Preferred embodiments grow a first diamondlike film (114) on a silicon substrate (102). Diamond film (116) is then grown on diamondlike film (114), the diamondlike film (114) providing a high density of nucleation sites (108) for the diamond film (116). Diamond film growth is interrupted and a second diamondlike film (134) is grown to provide a second region of nucleation sites (128). Second diamond film (126) is grown from nucleation sites (128), resulting in a relatively thick diamond film (140) with relatively small crystal grains.

REFERENCES:
patent: 3030187 (1962-04-01), Eversole
patent: 3030188 (1962-04-01), Eversole
patent: 3232799 (1966-01-01), Dash
patent: 3243323 (1966-03-01), Corrigan et al.
patent: 3520740 (1970-07-01), Addamiano
Kobashi, et al.; "CVD Synthesis of (110)-Oriented Bilayer Diamond Films", May 7-12, 1989; ECS Meeting, Los Angeles, CA. pp. 296-305.

Affiliated with

Also associated with

Rating

Diamond growth method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Diamond growth method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Diamond growth method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2416352