Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent
1992-12-17
1994-09-20
Paschall, Mark H.
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
21912141, 21912159, 21912151, 21912149, 219686, 21912143, 427575, 117103, 117929, B23K 1000
Patent
active
053491548
ABSTRACT:
A swirl flow microwave plasma torch is provided for the growth of diamond films. The swirl flow torch incorporates an injection nozzle that directs reactant gases into a cylindrical flow tube extending through the center of a tuned microwave cavity. The outer surface of the nozzle comprises a contoured, conical shape that causes inert gas, directed tangentially against the outer surface of the nozzle, to swift in a helical path that surrounds and confines the reactant gas emerging from the nozzle. The tuned cavity is coupled to a microwave energy source to generate a highly localized plasma in the reactant gas in the center of the sheathing swirl of inert gas. The swirl of inert gas contains the plasma in a well-defined shape, prevents in-diffusion of undesirable gases, forms a boundary layer to prevent plasma migration, and provides flow tube cooling. The reactant gas flow forces the plasma out of the flow tube to form a plasma flame that can be impinged on a substrate to induce diamond growth.
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Goldberg Ira B.
Harker Alan B.
McFarren John C.
Paschall Mark H.
Rockwell International Corporation
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