Diamond film with sharp field emission turn-on

Details Diamond film with sharp field emission turn-on Diamond film with sharp field emission turn-on

1996-11-04

1998-12-22

Turner, A. A.

Electric lamp and discharge devices

Electrode and shield structures

Point source cathodes

313310, 313311, H01J 114, H01J 116

Patent

active

058523413

ABSTRACT:
An ultrasmooth diamond film has a thickness greater than about ten microns and an average grain size less than about 0.5 micron. The ultrasmooth diamond film of the present invention is grown using ordinary microwave plasma CVD methods, with a metal vapor source included in the reactor to produce vapor during the growth of the film. The metal vapor source may be chosen from the first row transition elements, chromium, iron, cobalt, and nickel, or from the lanthanides praseodymium, europium, or erbium. Any metal capable of existing in the vapor phase in the presence of the hydrogen plasma, will cause formation of the ultrasmooth film of the present invention.

REFERENCES:
patent: 4164680 (1979-08-01), Villalobos
patent: 5132587 (1992-07-01), Lemelson
patent: 5180951 (1993-01-01), Dworsky et al.
patent: 5580380 (1996-12-01), Liu et al.
patent: 5585176 (1996-12-01), Grab et al.

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