Diamond film synthesizing apparatus and method thereof using dir

Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering

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20429806, 20429833, C23C 1400

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active

056479646

ABSTRACT:
An improved diamond film synthesizing apparatus and a method thereof using a direct current glow discharge plasma enhanced chemical vapor deposition advantageously providing a plurality of cathodes for forming a relatively large plasma size, which includes a reactor having an upper wall and a bottom wall; a plurality of spaced apart cathode holders half inserted into the upper wall of the reactor, arranged in a triangle when looking dowawardly over the head of the reactor; a plurality of cathode connecting rods, each of which is threadly connected to the cathode holders inside the reactor, respectively; a plurality of cathodes, each of which is threadly connected to the cathode connecting rods, respectively; an anode half inserted into the bottom wall of the reactor and having a substrate attached on the top thereof, whereby all the cathodes and the anodes are spaced apart inside the reactor by a predetermined distance; and a gas supplier connected to one side wall of the reactor having a circular gas supplying tube having a plurality of holes for injecting gas into the reactor. In addition, the diamond film synthesizing method using a direct current glow discharge plasma enhanced chemical vapor deposition comprises the methods of cutting off the heat transfer from a cathode to a cathode holder, thereby maintaining the temperature of a cathode to be within a predetermined range for a stable production of a plasma.

REFERENCES:
Kazuhiro Suzuki et al., Japanese Journal of Applied Physics, 29 (1991) 153-157.
B. Singh et al., Appl. Phys. Lett. 52 (1988) 1658-1660.
J.Seigler et al., Thin Solids Films 219 (1992) 4-6.
P.J. Kung and Tzeng, J.Appl.Phys. 66 (1989) 4676-4684.

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